Mos Field Effect Transistor
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Hochfrequenz-Polaritäts-Schutz-Anwendung Mos Field Effect Transistors 20A 200V
Preis: Negotiable
MOQ: 1500
Lieferzeit: 5-15days
Marke: OTOMO
Markieren:High Frequency Mos Field Effect Transistor, Mos Field Effect Transistor 20A, 200V Mos Field Effect Transistor
Suitable for high frequency switching power supply 20A 200V Schottky Barrier Diode HBR20200 TO-220C TO-220HF TO-263 APPLICATIONS High frequency switch power supply Free wheeling diodes, polarity protection applications FEATURES Common cathode structure Low power loss, high efficiency High Ope... Mehr sehen
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